晶体管低频小信号放大倍数测试与探究

Testing and researching for transistors small-signal current gain

本文对晶体管h参数低频小信号放大倍数进行了测试与研究。分析了晶体管直流放大倍数与交流放大倍数的不同,并用晶体管直流综合参数测试仪及h参数测试仪分别对直流放大倍数和低频小信号放大倍数进行了测试,对测试的结果进行对比分析,证明了在晶体管的线性放大区域。

This paper mainly focuses on the test and research of low-frequency small-signal hfe current gain of h parameters of transistor. Analysis of the meaning of the transistor DC current gain and AC current gain, and transistor DC parameter testing instrument and h parameter testing instrument for DC current gain of hFE and low-frequency small-signal current gain hfe were tested, compared to the test results, proves that hfe 〉 hFE, at the linear area of transistor DC current gain.