GaAs/AlGaAs量子级联激光器中的声学声子散射

Acoustical phonon scattering in GaAs/AlGaAs quantum cascade laser

以具有三量子阱有源区的GaAs/Al0.15Ga0.85As量子级联激光器中的子带间;声学声子辐射散射为研究对象,从理论上研究了三量子阱有源区中的量子阱和势垒厚度的变化对声学声子辐射散射时间的调制作用.通过对子带间的声学声子辐射散射的总跃迁速率与相应的子带间的总自发辐射速率的比较,研究了声学声子辐射散射对量子级联激光器的辐射发光性能的影响.

Basing on difference method,the acoustical phonon emission scattering time in three-quantum-wells active region of GaAs/Al0.15Ga0.85As quantum cascade laser is studied.Theoretical results show how the acoustical phonon emission scattering time changes with the active region＇s structural parameters,such as the widths of quantum wells or potential barriers in the active region change.Through the ratio comparison between the total transition rate for acoustical phonon emission scattering rate and total spontaneous emission rate between subbands,the effect of acoustical phonon emission scattering on the quantum cascade laser＇s light emission is discussed.