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一种应用于无线局域网802.11a/n的高功率线性功率放大器设计 被引量：1

A High-power Linear Power Amplifier for WLAN 802.11a/n
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摘要 提出一种应用于无线局域网802.11a/n的高功率高线性度InGaP/GaAs异质结晶体管功率放大器。通过采用新颖的线性偏置电路和带宽拓展电路,该功放实现了在64正交振幅调制正交频分复用信号输入激励下,误差向量幅度(EVM)在3%时实现超过21dBm的线性输出功率,在超过1GHz频段内实现超过31dB的小信号增益。 A high power high linear applications is reported. By using nove power amplifier exhibits a 21 dBm lin 64QAM OFDM signal, and a 31 dB sm ity InGaP/GaAs HBT power amplifier for Wireless-LAN 1 linear bias circuit and bandwidth expansion circuit, the ear power at error vector magnitude （EVM） 3% with all signal gain over 1 GHz bandwidth.
作者 陈磊 崔杰 赵鹏 康春雷 史佳 牛旭 刘轶
机构地区 中国科学院上海高等研究院 中国科学院大学
出处 《固体电子学研究与进展》 CAS CSCD 北大核心 2014年第3期221-226,302,共7页 Research & Progress of SSE
关键词 功率放大器 高线性度 无线局域网 802 11a N power amplifier high linearity wireless local area net works（WLAN） 802. lla/n
分类号 TN722.75 [电子电信—电路与系统] TN925.93 [电子电信—通信与信息系统]
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参考文献7

  • 1Adil A Kidwai, Anna Nazimov, Yishai Eilat, et al. Fully integrated 23 dBm transmit chain with on chip power amplifier and balun for 802. lla application in standard 45 nm CMOS process[C]. Proc IEEE RFIC, 2009:273-276.
  • 2Jihwan Kim, Woonyun Kim, Kevin T Kornegay, et al. A fully integrated high-power linear CMOS power amplifier with a parallel-series combining transformer[J]. IEEE Journal of Solid-state Circuits, 2012, 47 (3) : 599-614.
  • 3李文渊,张茜.A novel broadband power amplifier in SiGe HBT technology[J].Journal of Semiconductors,2013,34(1):61-65. 被引量：2
  • 4Massimiliano Pingue, Barbara Orobello, Rossella Dici- omma, et aI. 1:6 GHz 4 W MMIC GaAs high power amplifier [J]. Microwave and Optical Technology Let- ters, 2012, 54 (12): 2747-2751.
  • 5Lin Chien-Cheng, Hsu Yu-Cheng. Single-chip dual- band WLAN power amplifier using InGaP/GaAs HBT [C]. Proc European Gallium Arsenide and Other Sem- iconductor Application Symposium, 2005: 489-492.
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二级参考文献11

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共引文献1

同被引文献6

  • 1刘恩科,朱秉升,罗晋生.半导体物理学[M].7版.北京:电子工业出版社,2011.
  • 2Wang Y,Naylor R.Challenges in designing 5 GHz802.11ac WiFi power amplifiers[J].2014IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications(PAWR),2014,16(18):19-23.
  • 3Huang L,Zhang Z,Li S,et al.An InGaP/GaAs HBT power amplifier for 4.9~5.9 GHz WirelessLAN applications[C].2014 12th IEEE International Conference on Solid-state and Integrated Circuit Technology(ICSICT),2014,1(3):28-31.
  • 4Noh Y S,Park C S.PCS/W-CDMA dual-band MMIC power amplifier with a newly proposed linearizing bias circuit[J],IEEE J Solid-state Circuits,2002,37(9):1096-1099.
  • 5Steve C Cripps.RF Power Amplifier for Wireless Communications[M].Massachusetts:Artech House Publishers,2006.
  • 6Zhang G.Linear power amplifier architectures and its packaging technologies for new generation smart phone applications[C].2010 10th IEEE International Conference on Solid-state and Integrated Circuit Technology(ICSICT),2010:1323-1326.

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固体电子学研究与进展
2014年 第3期

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