基于101.6mm(4英寸)砷化镓晶圆的相移掩膜光刻技术研究

Research of Phase Shifting Mask Lithographic Process on 101.6mm (4inch) GaAs Wafer

首次在国内开展基于101.6mm(4英寸)砷化镓晶圆的0.13μm相移掩膜光刻工艺研究。通过与传统的二进制掩膜技术比较,分析讨论了相移掩膜技术提高光刻系统分辨率以及改善光刻形貌的原理。通过光刻仿真软件模拟相移掩膜和二进制掩膜工艺,结果表明相移掩膜工艺对应的光学成像质量明显优于二进制掩膜工艺。进一步的实验表明,相移掩膜的曝光范围要高于二进制掩膜,同时相移掩膜工艺的线宽均匀性以及光刻剖面形貌也是要优于二进制掩膜。通过以上的研究,表明相移掩膜技术可以提高光刻系统分辨率以及改善光刻形貌。

This paper, for the first time, reported 0.13 μm lithographic process on 101.6 mm （4 inch） GaAs wafer based on phase shifting mask. Compared with the traditional binary mask lithographic process, the principle of the improvement of the critical dimension and photo resist profile was discussed. The phase shifting mask and binary mask lithographic process were ana- lyzed with the lithographic simulation software PROLITHX3, and it was demonstrated that the image qualities of the phase shifting mask through the lithographic system were better than those of the binary mask. Furthermore, by using the scanner lithography machine, the exposure lati- tude of the phase shifting mask process was found to be higher than the binary mask. Mean- also better than that of the binary prove the critical dimension and mask, which showed that the phase shifting mask could im e photo resist profile.