期刊文献+

门电压调控的ZGNR/AGNR/ZGNR异质结电输运性质研究

Gate modulation on the Electronic Transport Properties of ZGNR/AGNR/ZGNR heterojunctions
下载PDF
导出
摘要 采用第一性原理计算方法,研究了门电压调控的ZGNR/AGNR/ZGNR异质结电输运性质,发现,门电压调控对异质结电输运性质有重要影响,表现为先增强再抑制.随着异质结中心区AGNR长度的减小,体系的电流急剧增大.电荷输运能力的增强与异质结的长度和透射谱密切相关. The electronic transport properties of ZGNR/AGNR/ZGNR heterojunctions under gate modulation is investigated within the first-principle method. It is found that the charge transport depend significantly on the gate modulation. With the enhancement of the gate voltages the current increases first and then drops. Moreover, the current increases drastically with the length decrease of the central region.
作者 刘文
出处 《济宁学院学报》 2014年第3期49-51,共3页 Journal of Jining University
基金 山东省高等学校科技计划项目(J13LJ53)
关键词 石墨烯纳米带 电荷输运 门电压 grapheneribbon charge transport gate voltage
  • 相关文献

参考文献5

  • 1G E Moore. Cramming More Components onto IntegratedCircuits [J]. Electronics Magazine. 1965(38):114-117.
  • 2D Reddy, L F Register, G D Carpenter, S K Banerjee.Graphene field一effect transistors[J]. J. Phys. D:Appl. Phys. 2011(44) :31300卜313007.
  • 3Y M Lin, C Dimitrakopoulos, K A Jenkins, et al.100-GHz Transistors from wafer-scale epitaxialgraphene[J], Science. 2010(327):662-664.
  • 4G P Tang, J C Zhou, Z H Zhang,et al. A theoreticalinvestigation on the possible improvement of spin-filter effects by an electric field for a zigzaggraphene nanoribbon with a line defect[J]. Carbon.2013(60):94-101.
  • 5Y J Dong, X F Wang, M X Zhai.et al.ffects ofGeometry and Symmetry on Electron Transport throughGraphene -Carbon-Chain JunctionstJ]. J. Phys. Chem.C.2013(117):18845-18850.

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部