摘要
基于0.25μm GaAs pHEMT工艺设计了Ka波段单片压控振荡器，该压控振荡器采用源极正反馈结构，变容管采用源极和漏极接地的pHEMT管。通过优化输出匹配网络和谐振网络以改善输出功率和相位噪声性能，使用蒙特卡洛成品率分析对本设计的成品率进行分析和改进。版图仿真结果显示：芯片输出频率为24.6-26.3 GHz，输出功率为（10±1）dBm，谐波抑制大于19 dB，芯片尺寸为1.5 mm×1 mm。
A Ka-band MMIC VCO was designed with 0.25 μm GaAs pHEMT process. The source electrode positive feed-back structure is adopted for VCO. The pHEMT whose source electrode and drain electrode are connected to the ground is used for the varactor. The resonance network and the matching network are optimized to improve the output power and the phase noise performance. The yield of the VCO is analyzed and improved by the Monte-Carlo method. The simulation data shows the typical output power of VCO is 10±1 dBm,the output frequency of VCO is 24.6~26.3 GHz,the harmonic suppression is better than 19 dB. The chip size of the MMIC VCO is 1.5 mm×1 mm.
出处
《现代电子技术》
2014年第13期77-80,共4页
Modern Electronics Technique
