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An Overview of Non-Volatile Flip-Flops Based on Emerging Memory Technologies(Invited paper)

An Overview of Non-Volatile Flip-Flops Based on Emerging Memory Technologies(Invited paper)
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摘要 Low power consumption is a major issue in nowadays electronics systems. This trend is pushed by the development of data center related to cloud services and soon to the Internet of Things (IoT) deployment. Memories are one of the major contributors to power consumption. However, the development of emerging memory technologies paves the way to low-power design, through the partial replacement of the dynamic random access memory (DRAM) with the non-volatile stand-alone memory in servers or with the embedded or distributed emerging non-volatile memory in IoT objects. In the latter case, non-volatile flip-flops (NVFFs) seem a promising candidate to replace the retention latch. Indeed, IoT objects present long sleep time and NVFFs offer to save data in registers with zero power when the application is idle. This paper gives an overview of NVFF architecture flavors for various emerging memory technologies. Low power consumption is a major issue in nowadays electronics systems. This trend is pushed by the development of data center related to cloud services and soon to the Internet of Things (IoT) deployment. Memories are one of the major contributors to power consumption. However, the development of emerging memory technologies paves the way to low-power design, through the partial replacement of the dynamic random access memory (DRAM) with the non-volatile stand-alone memory in servers or with the embedded or distributed emerging non-volatile memory in IoT objects. In the latter case, non-volatile flip-flops (NVFFs) seem a promising candidate to replace the retention latch. Indeed, IoT objects present long sleep time and NVFFs offer to save data in registers with zero power when the application is idle. This paper gives an overview of NVFF architecture flavors for various emerging memory technologies.
出处 《Journal of Electronic Science and Technology》 CAS 2014年第2期173-181,共9页 电子科技学刊(英文版)
基金 supported by the ANR project DIPMEM under Grant No.ANR-12-NANO-0010-04
关键词 Emerging memory technology ferroelectric RAM low power magnetic RAM non-volatile flip-flops phase change RAM resistive RAM Emerging memory technology,ferroelectric RAM,low power,magnetic RAM,non-volatile flip-flops,phase change RAM,resistive RAM
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