期刊文献+

Electrolyte composition and removal mechanism of Cu electrochemical mechanical polishing 被引量:1

Electrolyte composition and removal mechanism of Cu electrochemical mechanical polishing
下载PDF
导出
摘要 The optimization of electrolytes and the material removal mechanisms for Cu electrochemical mechanical planarization(ECMP)at different pH values including 5-methyl-1H-benzotriazole(TTA),hydroxyethylidenediphosphoric acid(HEDP),and tribasic ammonium citrate(TAC)were investigated by electrochemical techniques,X-ray photoelectron spectrometer(XPS)analysis,nano-scratch tests,AFM measurements,and polishing of Cu-coated blanket wafers.The experimental results show that the planarization efficiency and the surface quality after ECMP obtained in alkali-based solutions are superior to that in acidic-based solutions,especially at pH=8.The optimal electrolyte compositions(mass fraction)are 6% HEDP,0.3% TTA and 3% TAC at pH=8.The main factor affecting the thickness of the oxide layer formed during ECMP process is the applied potential.The soft layer formation is a major mechanism for electrochemical enhanced mechanical abrasion.The surface topography evolution before and after electrochemical polishing(ECP)illustrates the mechanism of mechanical abrasion accelerating electrochemical dissolution,that is,the residual stress caused by the mechanical wear enhances the electrochemical dissolution rate.This understanding is beneficial for optimization of ECMP processes. The optimization of electrolytes and the material removal mechanisms for Cu electrochemical mechanical planarization (ECMP) at different pH values including 5-methyl-1H-benzotriazole (TTA), hydroxyethylidenediphosphoric acid (HEDP), and tribasic ammonium citrate (TAC) were investigated by electrochemical techniques, X-ray photoelectron spectrometer (XPS) analysis, nano-scratch tests, AFM measurements, and polishing of Cu-coated blanket wafers. The experimental results show that the planarization efficiency and the surface quality after ECMP obtained in alkali-based solutions are superior to that in acidic-based solutions, especially at pH=8. The optimal electrolyte compositions (mass fraction) are 6% HEDP, 0.3% TTA and 3% TAC at pH=8. The main factor affecting the thickness of the oxide layer formed during ECMP process is the applied potential. The soft layer formation is a major mechanism for electrochemical enhanced mechanical abrasion. The surface topography evolution before and after electrochemical polishing (ECP) illustrates the mechanism of mechanical abrasion accelerating electrochemical dissolution, that is, the residual stress caused by the mechanical wear enhances the electrochemical dissolution rate. This understanding is beneficial for optimization of ECMP processes.
出处 《Journal of Central South University》 SCIE EI CAS 2014年第6期2191-2201,共11页 中南大学学报(英文版)
基金 Project(50975058)supported by the National Science Foundation of China
关键词 electrochemical mechanical polishing electrolyte composition removal mechanism 5-methyl-lH-benzotriazole hydroxyethylidenediphosphoric acid tribasic ammonium citrate 电化学机械抛光 电解质 组合物 X射线光电子能谱仪 材料去除机理 化学机械平坦化 机构 机械磨损
  • 相关文献

参考文献30

  • 1DESHPANDE S, KUIRY S C, KLIMOV M, OBENG Y, SEAL S. Chemical mechanical planarization of copper: Role of oxidants and inhibitors [J]. Journal of The Electrochemical Society, 2004, 151 (1): G788- G794.
  • 2LIU F Q, DU T B, DUBOUST A, TSAI S, HSU W Y. Cu planarization in electrochemical mechanical planarization [J]. Journal of The Electrochemical Society, 2006, 153(6): C377-C381.
  • 3LIN J Y, ALAN C W. Adsorption-desorption study of benzotriazole in a phosphate-based electrolyte for Cu electrochemical mechanical planarization [J]. Electrochimica Acta, 2010, 55(7): 2325-2331.
  • 4HONG Y, ROY D, BABUS V. Ammonium dodecyl sulfate as a potential corrosion inhibitor surfactant for electrochemical mechanical planarization of copper [J]. Electrochemical and Solid-State Letters, 2005, 8(11): G297-G300.
  • 5LIN J Y, WEST A C, WAN C C. Adsorption and desorption studies of glycine and benzotriazole during Cu oxidation in a chemical mechanical polishing bath [J]. Journal of The Electrochemical Society, 2008, 155(6): H396-H400.
  • 6GOONETILLEKE P C, ROY D. Relative roles of acetic acid, dodecyl sulfate and benzotriazole in chemical mechanical and electrochemical mechanical planarization of copper [J]. Applied Surface Science, 2008, 254(9): 2696-2707.
  • 7STEWART K L, ZHANG J, LI S T, CARTER P W, GEWIRTH A A. Anion effects on Cu-benzotriazole film formation implications for CMP [J]. Journal of The Electrochemical Society, 2007, 154(1): D57-D63.
  • 8LIN J Y, CHOU S W. Synergic effect of benzotrizaole and chloride ion on Cu passivation in a phosphate electrochemical mechanical planarization electrolyte [J]. Electrochimica Acta, 2011, 56: 3303-3310.
  • 9WANG K, LI Y Z, KANG R K, GUO D M. Generation and removal of pits during chemical mechanical polishing process for MgO single crystal substrate [J], Applied Surface Science, 2010, 256(9): 2691-2699.
  • 10HUO J, SOLANKI R, MCANDREW J. Electrochemical polishing of copper for microelectronic applications [J]. Surface Engineering, 2003, 19(1): 11-16.

同被引文献4

引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部