期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

LTE/WiMAX片上变压器的分析与设计 被引量：1

Analysis and Design of On-Chip Transformers for LTE/WiMAX
下载PDF
导出
摘要 针对TSMC 0.13μm RF CMOS射频和混合信号工艺器件库中无变压器器件，而变压器器件是设计射频通信电路的关键，该器件的有无直接影响射频通信前端电路性能的优劣。通过对多种片上变压器的性能研究，设计出应用于LTE/WiMAX的八边形片上变压器，给出了与频率无关的集总元器件等效电路模型及模型参数提取公式，并对新器件进行了流片，测试结果表明在0.1～10 GHz频率范围内L、Q参数具有良好的吻合性，且耦合系数K良好，达到设计目的。该变压器的设计成功将有助于4G通信芯片的开发和应用。 Transformer is a key device in radio frequency communication circuit, which can directly effect on the performance of the RF front-end circuit. However, there is not transformer in TSMC 0.13 μm RF CMOS mixed-signal process library. In order to solve this problem, an octagonal transformer which is applied in LTE/WiMAX is designed and fabricated by the analysis of all kinds of on-chip transformer performance, and the frequency-independent lumped-element equivalent circuit model and the parameter-extracted expressions are given. The measurement results show that L and Q have excellent agreement with the measured data from the frequency range of 0.1 GHz to 10 GHz, and coupling coefficient K is perfect. The successful design of the transformer will contribute to the development and application of 4G communication chips.
作者 张华斌 蔡敏 武海军 李正平
机构地区 华南理工大学电子与信息学院 电子科技大学中山学院 广州润芯信息技术有限公司
出处 《电子科技大学学报》 EI CAS CSCD 北大核心 2014年第3期363-368,共6页 Journal of University of Electronic Science and Technology of China
基金 国家863计划(2009AA01Z260) 广东省科技计划项目(2010A090601001)
关键词 LTE WIMAX 集总参数模型 八边形 片上变压器 射频 LTE/WiMAX lumped parameter model octagonal on-chip transformer radio frequency
分类号 TN4 [电子电信—微电子学与固体电子学] TN6 [电子电信—电路与系统]
  • 相关文献

参考文献13

  • 1ALY A H, BEISHLINE D W, SHARAWY B E. Filter integration using on-chip transformers[C]//The 2004 IEEE MITT-S International Microwave Symposium Digest. Fork Worth: IEEE, 2004(3): 1975-1978.
  • 2AHN H R. Modified asymmetric impedance transformers (MCCTs and MCVTs) and their application to impedance-transforming three-port 3-dB power dividers[J]. IEEE Transactions on Microwave Theory and Techniques, 2011, 59(12): 3312-3321.
  • 3GAO Wei, JIAO Chao, LIU Tao, et al. Scalable compact circuit model for differential spiral transformers in CMOS RFICs[J]. IEEE Transactions on Electron Devices, 2006, 53(9): 2187-2194.
  • 4JEN Yung-nien, TSAI Jeng-han, HUSNG Tian-wei, et al. Design and analysis of a 55-71 GHz compact and broadband distributed active transformer power amplifier in 90-nm CMOS process[J]. IEEE Transactions on Microwave Theory and Techniques, 2009, 57(7): 1637-1646.
  • 5李萌,余志平.用于CMOS射频集成电路中多级放大器级间耦合的片上变压器的设计方法与模型[J].清华大学学报（自然科学版）,2011,51(3):328-333. 被引量：1
  • 6ZHOU J J, ALLSTOT D J. Monolithic transformers and their application in a differential CMOS RF low-noise amplifier[J]. IEEE Joumal of Solid-State Circuits, 1998, 33(12): 2020-2027.
  • 7LONG J R. Monolithic transformers for silicon RF IC design[J]. IEEE Joumal of Solid-State Circuits, 2000, 35 (9): 1368-1382.
  • 8MOHAN S S. The design, modeling and optimization of on-chip inductor and transformer circuit[D]. Stanford: Stanford University, 1999.
  • 9NOBUHIRO S, TORU M, TAKAHIRO N, et al. Scalable transformer model based on ladder topological equivalent circuit for Si RFICs[C]//2010 Topical meeting on silicon monolithic integrated circuits in RF systems(SiRF). New Orleans: IEEE, 2010: 12-15.
  • 10WONG S C, LEE T Y, MAD J, et al. An empirical three-dimensional crossover capacitance model for multilevel interconnect VLSI circuits[J]. IEEE Transactions on Semiconductor Manufacturing, 2000, 13(2): 219-227.

二级参考文献16

  • 1LaRocca T, Liu J, Chang M. 60GHz CMOS amplifiers using transformer-coupling and artificial dielectric differential transmission lines for compact design [J]. IEEE Journal of Solid-State Circuits, 2009, 44(5) .. 1425 1435.
  • 2Chowdhury D, Reynaert P, Niknejad A. Design considerations for 60 GHz transformer-coupled CMOS power amplifiers [J]. IEEE Journal of Solid-State Circuits, 2009, 44(10) : 27332744.
  • 3Shin D, Park J, Yue C. A low-power, 3-5-GHz CMOS UWB LNA using transformer matching technique [C]// Proc. IEEE Asian Solid-State Circuit Conference. Jeju, Korea: IEEE Press, 2007 : 95 98.
  • 4Ansoft, Inc. 3D Full-Wave Electromagnetic Field Simulator [Z/OL]. [2008-12-05]. http://www, ansoft, com/hfss.
  • 5Yao T, Gordon M, Tang K, et al. Algorithmic design of CMOS LNAs and PAs for 60-GHz radio [J]. IEEE Journal of Solid-State Circuits, 2007, 42(5) : 1044 1057.
  • 6Long J. Monolithic transformers for silicon RF IC design [J]. IEEE Journal of Solid-State Circuits, 2000, 35(9): 1368 1382.
  • 7Rotella F, Cismaru C, Tkachenko Y, et al. Characterization, design, modeling, and model validation of silicon on wafer M:N balun components under matched and unmatched conditions [J]. IEEE Journal of Solid-State Circuits, 2006, 41(5) : 1201 1209.
  • 8Yue C, Wong S. On-chip spiral inductors with patterned ground sheilds for Si-based RF IC's [J]. IEEE Journal of Solid-State Circuits, 1998, 33(5) : 743 752.
  • 9Greenhouse H. Design of planar rectangular microelectronic induetors [J]. IEEE Transactions on Parts, Hybrids, and Packaging, 1974, 10(2) :101 109.
  • 10Hsu H. Analytical formula for inductance of metal of various width in spiral inductors [J]. IEEE Transactions on Electron Devices, 2004, 51(8) : 1343 1346.

同被引文献2

引证文献1

二级引证文献1

电子科技大学学报
2014年 第3期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部