真空热压烧结对高纯W-Si合金靶材性能影响

Effects of Vacuum Hot Pressing Sintering on the Performance of High Purity W-Si Alloy Target

以高纯W-Si合金粉（〉99．995％）为原料，采用真空热压烧结工艺制备高纯W-Si合金靶材。研究烧结温度、热压压力、保温时间等工艺条件对靶材密度、微观组织性能的影响。结果表明，烧结温度在1350-1380℃，热压压力25～30MPa，保温时间1．5～2h，可制备出相对密度99％以上、平均晶粒尺寸100gm以内的高性能W-Si合金靶材。

Using high purity W-Si alloy powder （〉 99.995%） as raw material, high purity W-Si alloy target was prepared by vacuum hot pressing sintering process. The effects of process parameters, including sintering temperature, hot pressing pressure and holding time, on the target performance of density and microstructure were investigated. The results show that under the process parameters of sintering temperature of 1350-1380 ℃, hot pressing pressure of 25-30 MPa, and holding time of 1.5-2 h, high performance W-Si alloy target could be prepared with more than 99% relative density and average grain size less than 100 μm.