Spectroscopic and scanning probe analysis on large-area epitaxial graphene grown under pressure of 4 mbar on 4H-SiC(0001)substrates 被引量：1

Spectroscopic and scanning probe analysis on large-area epitaxial graphene grown under pressure of 4 mbar on 4H-SiC(0001)substrates

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摘要 We produced epitaxial graphene under a moderate pressure of 4 mbar （about 400 Pa） at temperature 1600 ℃. Raman spectroscopy and optical microscopy were used to confirm that epitaxial graphene has taken shape continually with slight thickness variations and regularly with a centimeter order of magnitude on 4H-SiC （0001） substrates. Then using X-ray photoelectron spectroscopy and Auger electron spectroscopy, we analyzed the chemical compositions and estimated the layer number of epitaxial graphene. Finally, an atomic force microscope and a scanning force microscope were used to characterize the morphological structure. Our results showed that under 4-mbar pressure, epitaxial graphene could be produced on a SiC substrate with a large area, uniform thickness but a limited morphological property. We hope our work will be of benefit to understanding the formation process of epitaxial graphene on SiC substrate in detail. We produced epitaxial graphene under a moderate pressure of 4 mbar （about 400 Pa） at temperature 1600 ℃. Raman spectroscopy and optical microscopy were used to confirm that epitaxial graphene has taken shape continually with slight thickness variations and regularly with a centimeter order of magnitude on 4H-SiC （0001） substrates. Then using X-ray photoelectron spectroscopy and Auger electron spectroscopy, we analyzed the chemical compositions and estimated the layer number of epitaxial graphene. Finally, an atomic force microscope and a scanning force microscope were used to characterize the morphological structure. Our results showed that under 4-mbar pressure, epitaxial graphene could be produced on a SiC substrate with a large area, uniform thickness but a limited morphological property. We hope our work will be of benefit to understanding the formation process of epitaxial graphene on SiC substrate in detail.

作者王党朝张玉明

机构地区 School of Physics and Electronic Engineering School of Microelectronics Key Laboratory of Wide Band-gap Semiconductor Materials and Devices

出处《Chinese Physics B》 SCIE EI CAS CSCD 2014年第7期573-578,共6页 中国物理B（英文版）

基金 supported by the Key Specific Projects in the National Science&Technology Program,China(Grant No.2011ZX02707) the Key Research Foundationfrom the Ministry of Education of China(Grant No.JY10000925016) the Specialized Research Fund from Xianyang Normal University,China(GrantNos.13XSYK010 and 201302026)

关键词 SiC substrate GRAPHENE epitaxial graphene SiC substrate, graphene, epitaxial graphene

分类号 O613.71 [理学—无机化学]

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