期刊文献+

Degradation of ferroelectric and weak ferromagnetic properties of BiFeO_3 films due to the diffusion of silicon atoms

Degradation of ferroelectric and weak ferromagnetic properties of BiFeO_3 films due to the diffusion of silicon atoms
下载PDF
导出
摘要 Crystalline BiFeO3 (BFO) films each with a crystal structure of a distorted rhombohedral perovskite are characterized by X-ray diffraction (XRD) and high-resolution electron microscopy (HRTEM). The diffusion of silicon atoms from the substrate into the BiFeO3 film is detected by Rutherford backscattering spectrometry (RBS). The element analysis is per- formed by energy dispersive X-ray spectroscopy (EDS). Simulation results of RBS spectrum show a visualized distribution of silicon. X-ray photoelectron spectroscopy (XPS) indicates that a portion of silica is formed in the diffusion process of silicon atoms. Ferroelectric and weak ferromagnetic properties of the BFO films are degraded due to the diffusion of silicon atoms. The saturation magnetization decreases from 6.11 down to 0.75 emu/g, and the leakage current density increases from 3.8 × 10^-4 upto7.1 × 10^-4 A/cm-2. Crystalline BiFeO3 (BFO) films each with a crystal structure of a distorted rhombohedral perovskite are characterized by X-ray diffraction (XRD) and high-resolution electron microscopy (HRTEM). The diffusion of silicon atoms from the substrate into the BiFeO3 film is detected by Rutherford backscattering spectrometry (RBS). The element analysis is per- formed by energy dispersive X-ray spectroscopy (EDS). Simulation results of RBS spectrum show a visualized distribution of silicon. X-ray photoelectron spectroscopy (XPS) indicates that a portion of silica is formed in the diffusion process of silicon atoms. Ferroelectric and weak ferromagnetic properties of the BFO films are degraded due to the diffusion of silicon atoms. The saturation magnetization decreases from 6.11 down to 0.75 emu/g, and the leakage current density increases from 3.8 × 10^-4 upto7.1 × 10^-4 A/cm-2.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第7期712-716,共5页 中国物理B(英文版)
基金 supported by the International Cooperation Program of the Ministry of Science and Technology of China(Grant No.2011DFR50580) the NationalNatural Science Foundation of China(Grant Nos.11105100,11205116,and 11350110206)
关键词 FERROELECTRIC FERROMAGNETIC DIFFUSION silicon ferroelectric, ferromagnetic, diffusion, silicon
  • 相关文献

参考文献30

  • 1Kubel F and Schmid H 1990 Acta Crystallogr B 46 698.
  • 2Fruth V, Ramer R, Popa M, Calderon-Moreno J M, Anghel E M, Gart- net M, Anastasescu M and Zaharescu M 2007 J. Mater Sci.: Mater. Electron. 18 S187.
  • 3Zou J, Jiang J Z, Zhang Y X, Ma J N and Wan Q J 2012 Mater Lett. 72 134.
  • 4Pabst G W, Martin L W, Chu Y H and Ramesh R 2007 AppL Phys. Lett. 90 072902.
  • 5Yuan X Y, Luo L R, Wu D and Xu Q Y 2013 Chin. Phys. B 22 107702.
  • 6Catalan G and Scott J F 2009 Adv. Mater 21 2463.
  • 7Fiebig M 2005 Phys. D: Appl. Phys. 38 R123.
  • 8Wang J, Neaton J B, Zheng H, Nagarajan V, Ogale S B, Liu B, Viehland D, Vaithyanathan V, Schlom D G, Waghmare U V, Spaldin N A, Rabe K M, Wuttig M and Ramesh R 2003 Science 299 1719.
  • 9Nan C W, Liu G and Lin Y H 2003 Phys. Rev. Lett. 94 197203.
  • 10Qi X D, Dho J, Tomov R, Blamire M G and MacManus-Driscoll J L 2005 AppL Phys. Lett. 86 062903.

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部