摘要
Multilayer dielectric thin film edge filter has serious polarization sensitivity under oblique incidence. The cutoff-bands of the s-polarization and p-polarization light in conventional edge filter will separate obviously under 45° oblique incidence, which limits its application. Based on the two chosen materials TiO2 and SiO2, a novel stack structure is proposed to design the non-polarization short-wave-pass thin film edge filter. By using the(4H 4L 4H) as the matching layers, the polarization separation at 3 dB transmittance for the thin film edge filter cutoff-band is less than 1 nm at the incident angle of 45°. In this way, the non-polarization short-wave-pass edge filter is easily designed and fabricated.
Multilayer dielectric thin film edge filter has serious polarization sensitivity under oblique incidence. The cutoff-bands of the s-polarization and p-polarization light in conventional edge filter will separate obviously under 45° oblique inci- dence, which limits its application. Based on the two chosen materials TiO2 and SiO2, a novel stack structure is pro- posed to design the non-polarization short-wave-pass thin film edge filter. By using the （4H 4L 4H） as the matching layers, the polarization separation at 3 dB transmittance for the thin film edge filter cutoff-band is less than 1 nm at the incident angle of 45°. In this way, the non-polarization short-wave-pass edge filter is easily designed and fabricated.
基金
supported by the National Natural Science Foundation of China(No.61205062)
the Natural Science Foundation of Hubei Province of China(No.2012FFB02701)
the Scientific Research Project of Hubei Education Department(No.B2014246)
the Project of Hubei Province Universities Outstanding Youth Scientific Innovation Team(No.201431)
