n-ZnO/p-Si异质结J-V特性的实验研究

The Experimental Study on J-V Characteristic of n-ZnO/p-Si Heterojunction

本文首次报道 n-Zn O/p-Si异质结 J-V特性实验测量的初步结果——经退火处理的异质结反向饱和电流密度比未经退火的减少一个数量级 ,表明退火改善 Zn O/Si晶格界面结构 ,提高了 n-Zn

The experimental results of J-V characteristic of n-ZnO/p-Si heterojunction are first reported—the reverse saturation current density of annealed n-ZnO/p-Si heterojunction reduces by 10 times as compared with that of unannealed. It indicates that due to annealing treatment, the ZnO/Si interface structure and performance of n-ZnO/p-Si heterojunction are improved.