金属硅化物—硅功率肖特基二极管

Metal Silicides/Silicon Power Schottky Diodes

本文用X射线衍射(XRD)方法、俄歇电子能谱(AES)分析和电学测量方法研究了Ti/Si、Ni/Si和Cr/Si三种结构的金属硅化物的形成和特性。用电流—电压法和电容—电压法测量分析了TiSi_2/n-Si、Nix/n-Si和CrSi_2/n-Si三种肖特基势垒二极管特性,其势垒高度分别为0.61eV、0.66eV和0.66eV,理想因子均接近1。用此项技术制作的金属硅化物—n型硅肖特基功率二极管有优异的电学性能。

The formation and characterization of Ti/Si, Ni/Si and Cr/Si metal silicides are inverstigated using X-ray diffraction Analysis, Auger electron spectrum and electrical measurements. Current-Voltage and Capacitance-Voltage measurements are employed to characterize the Schottky barriers of TiSi2/n-Si, NiSix/n-Si and CrSi2/n-Si, which have the barrier heights of 0.61eV, 0.66eV and 0.66eV, respectively. Their ideality factor close to unity. The power Schottky diodes have excellent electrical properties using metal silicides technology.