摘要
研究了两种不同掺杂工艺的n-p-n型硅器件在^(60)Co的γ射线辐照前后产生的缺陷中心,讨论了它们在330～530K温度范围漂白对载流子相对浓度的影响。
The defects in n-p-n type silicon devices formed with two different doping technics are studied under irradiation with ~60Co γ-ray. The effects of radiation defects on the relative concentration after bleaching in the temperature range of 330 to 530 K are also discussed.
关键词
缺陷结构
载流子
硅器件
N-P-N结构
n-p-n Structure, Defect structure, Charge carrier, Gamma radiation
