摘要
采用poly-Si(n^+)/UTSiO_2/n^+-Si/P-Si发射结结构,研制出参数与常规晶体管相近、能长期稳定工作、在-55～100℃温度范围内,h_(FE)温度系数小于20%的硅晶体管。
By adopting poly-Si(n^+)/UTSiO_2/n^+-Si/P-Si junction emitter and controlling the fabricating process, the long-term stable silicon bipolar transistors with parameters nearly the same as conventional transistors, and the h_(FE)temperature coefficient less than 20% in the range from -55℃ to 100℃ have been fabricated and measured.
出处
《天津大学学报》
EI
CAS
CSCD
1993年第2期117-122,共6页
Journal of Tianjin University(Science and Technology)
关键词
电流增益
温度系数
晶体管
温度系统
temperature property of current gain for transistors, low temperature coefficient of hFE, polysilicon emitter transistors, low temperature transistors
