摘要
本文报导了在低温、低压下,以三甲基镓(TMG)、三乙基铟(TEI)为Ⅲ族源材料,100％砷烷(AsH_3)、100％磷烷(PH_3)为V族源材料,用金属有机化合物气相沉积技术在(100)InP衬底上生长出In_(1-x)Ga_xAs/InP多量子阱结构材料.X光摇摆曲线观测到由于周期性多量子阱结构而产生的多级卫星峰,光致发光测量给出了不同阱宽下由量子阱尺寸效应而导致的PL谱.
The present with trimethylgallium(TMG), triethylindium(TEI) and AsH3(100%), PH3 (100) as group Ⅲ and group Ⅴ sources respectively the In1-xGaxAs/InP multiquantum trap structure matetsals, were grown by organometallic vapor epitaxy (MOVPE) technique at a low temperature and low pressure. The periodicity of the multiquantum well strcuture was messured with a X-ray double crystal diffractometer. The photoluminescence spectrum was observed at 15 K.
出处
《吉林大学自然科学学报》
CAS
CSCD
1993年第1期80-82,共3页
Acta Scientiarum Naturalium Universitatis Jilinensis
关键词
三甲基镓
三乙基铟
量子阱
trimethylgallium, triethylindium, quantum well structure
