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不同结构多层膜中巨磁阻抗效应的研究 被引量:2

Research on Giant Magneto-Impedance Effect in Multilayered Films with Different Structure
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摘要 研究了封闭式和开放式FeSiB/Cu/FeSiB多层膜以及Cu/FeSiB/Cu多层膜中的巨磁阻抗效应。实验结果表明:多层膜的不同结构对巨磁阻抗效应影响很大。改变外加磁场,封闭式FeSiB/Cu/FeSiB多层膜中阻抗变化最大,开放式FeSiB/Cu/FeSiB多层膜次之,而Cu/FeSiB/Cu多层膜中阻抗几乎不变。三组多层膜中不同的阻抗特征可用多层膜的具体结构解释:在封闭式多层膜内,磁路形成密封结构,使泄漏到多层膜外面空间的磁通大大减少;在 Cu/FeSiB/Cu多层膜中,上下两铜层在铁磁薄膜内产生的总磁场近似为零,外加磁场的改变不能引起其阻抗发生变化。对于封闭式FeSiB/Cu/FeSiB多层膜,在100kHz到1MHz时就能够出现较大的阻抗变化比值,最大阻抗变化比值出现在3MHz。开放式FeSiB/Cu/FeSiB多层膜阻抗特性与封闭式类似,但比值只是封闭式多层膜的1/3。 Giant magneto-impedance (MI) of films with three types of multilayered structure has been investigated. Two of three are FeSiB/Cu/FeSiB films with closed and open structure, respectively, and the third type is Cu/FeSiB/Cu film with open structure. The experimental results show that, the FeSiB/Cu/FeSiB film with closed structure has the largest impedance change ratio of these three types, whereas the MI ratio in Cu/FeSiB/Cu film is the smallest. This difference can be contributed to their different structure designs. The film with closed structure posses a closed magnetic circuit, thus less magnetic flux leaks into the out space. When the total magnetic field is almost zero in Cu/FeSiB/Cu film, the impedance changes little. The impedance of the FeSiB/Cu/FeSiB film with closed structure changes remarkably in the frequency range from 100 kHz to 1 MHz, however, the MI effect in single FeSiB film with same thickness is very weak. The behavior of impedance spectra of FeSiB/Cu/FeSiB film with open structure is similar to the closed one, but the maximum MI ratio is only one-third of that in closed multilayered film.
出处 《功能材料》 EI CAS CSCD 北大核心 2001年第2期136-138,共3页 Journal of Functional Materials
关键词 多层膜 巨磁阻抗效应 研究 结构 Magnetron sputtering Thin films
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  • 1[1]Panina L V,Mohri K,Uchiyama T,et al. [J]. IEEE Transactions on Magnetics,1995,31(2) :1249.
  • 2[2]Sommer R L,Chen C L. [J]. Applied Physics Letter, 1995,67:857.
  • 3[3]Mohri K,Uchiyama T,Panina L V. [J]. Sensors and Actuators,1997,(59)A:1.
  • 4[4]Hika K,Panina L V,Mohri K. [J]. IEEE Transactions on Magnetics, 1996,32: 4594.
  • 5[5]Morikawa T, Nishibe Y, Yamadera H, et al. [J]. IEEE Transactions on Magnetics, 1997,33 (5): 4367.
  • 6[6]Morikawa T, Nishibe Y, Yamadera H, et al. [J]. IEEE Transactions on Magnetics, 1996,32:4965.
  • 7[7]Antonov A,Gadetsky S,Granovsky A,et al. [J]. Physica A,1997,241:414.

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