摘要
简述了 ULSI中采用以铜作为互连线技术的工艺过程及其研究发展状况 ,并着重对铜互连线技术中扩散阻挡层的选取。
WT5”BZ]The process of copper interconnections in ULSI and its development are described in this paper Furthermore, the key technologies, such as barrier selection, copper deposition and chemical mechanical polishing (CMP) are analyzed and discussed in detail [WT5HZ]
出处
《微电子学》
CAS
CSCD
北大核心
2001年第2期146-149,共4页
Microelectronics
基金
国家自然科学基金重点项目!(6 9936 0 2 0 )
