6H-SiC反型层电子库仑散射

Study of coulomb scattering in 6H SiC inversion layers

提出了一种综合的SiC反型层库仑散射解析模型 ,并在模型中考虑了库仑电荷中心的相关性 .对6H SiC反型层电子迁移率进行了单电子MonteCarlo模拟 ,模拟结果和实验值相符 .模拟结果表明 ,当有效横向电场变小时库仑散射的作用将增强 。

A comprehensive analytical model for coulomb scattering in 6H SiC inversion layers is presented considering all the coulomb effects of the charged centers near the SiC/SiO 2 interface. This model takes into account the effects of the charged centers correlation. The electron mobility in 6H SiC inversion layers has been studied by the single particle Monte Carlo technique. The simulation results agree with the experimental data very well. The study shows that coulomb scattering becomes more important at low transverse electric field and both the density and the distribution of charged cneters play an important role in electron transport in SiC inversion layers.