非对称势阱中施主杂质的束缚能

Binding Energy of Donor in Asymmetric Quantum Well

本文在有效质量近似下,使用变分法完成了非对称势阱中施主杂质的基态和前四个激发态的束缚能计算。给出了位于势阱中心的施主杂质这五个状态的束缚能随势阱宽度变化的曲线,及在给定势阱宽度下,它们的束缚能随杂质位置变化的曲线,所得结果与实验数据符合较好。

Using the effective mass approximation and variational approach,the binding energies of the ground and the first four excitedstates of donor in asymmetric quantum well are calculated. Thevariations of the binding energies of the five states of donor inthe center of GaAs well are calculated as functions of the sizeof quantum well. They are also calculated as functions of theposition of donor in given well size. The results agree well withthe experimental data.