摘要
用低压金属有机化学气相沉积 (L P- MOCVD)设备生长了 Al Ga In As压应变量子阱材料、应变补偿量子阱材料并进行了材料特性的测试 ,通过二次离子质谱仪 (SIMS)的测试讨论了材料中氧含量对材料特性的影响 ,通过采用高纯原料和纯化载气 ,生长出了较高质量的 Al Ga In As应变量子阱材料 :氧含量小 ,光荧光强度大 (2 5 m W,PL=0 .3) ,光荧光谱线窄 (FWHM=31me V)
Al Ga In As/ In P strained and strain- compensated quantum well have grown by L P- MOCVD and the characters of the materials have been measured by DCD、Photoluminescence、SIMS.Analyzed effect of the Oxygen concentration.using gigh purity sources of - metals,We got the high quality Al Ga In As/ In P strained quantum well,with little oxide concentration,large intensity of PL (PL =0 .31) ,narrow spectrum(FWHM=31me V) .
