摘要
在现有实验数据的基础上结合多种理论 ,给出了计算中子在材料中非电离能量损失 ( NIEL )和电离能量损失 ( IEL)的蒙特卡罗 ( MC)计算方法 ,利用此方法编写的计算程序可以对任意材料、多层结构中中子产生的 NIEL和 IEL以及空位和声子分布等进行计算。对硅和二氧化硅材料 1Me V中子损伤进行的计算结果表明 。
A Monte Carlo method of calculating non ionizing energy loss (NIEL) and ionizing energy loss (IEL) for 1 MeV neutrons in materials was presented, which is based on existing experimental data and unified theories. According to this method, a computer program was compiled which can be used to calculate damage of neutrons in any materials of layered structure. In this paper, the damage irradiation induced by 1 MeV neutrons in important semiconductor material Si and SiO 2 was calculated with this program. These results conclude that the method is valid. (
出处
《辐射防护》
CAS
CSCD
北大核心
2001年第1期48-52,共5页
Radiation Protection
基金
国防科技预研基金资助课题
