N离子注入金刚石膜方法合成的CN_x膜的成键结构

Bonding Structure of CN_x Films Synthesized by Implanting Nitrogen into Diamond Films

使用 N离子 (能量分别为 1 0 ke V,60 ke V)注入金刚石膜方法合成 CNx 膜 ,用 Raman光谱和 XPS光谱研究注入前后金刚石膜的成键结构 .结果表明 ,金刚石膜经 1 0 ke V N离子注入后 ,在 Raman光谱中出现一个较强的金刚石峰 (1 332 cm- 1)和一个弱的石墨峰 (G带 ,～ 1 550 cm- 1) .而 XPS N1s资料显示两个主峰分别位于～ 398.5e V和～ 40 0 .0 e V.金刚石膜经 60 ke V N离子注入后 ,N1s XPS光谱中的主峰位于～ 40 0 .0 e V;相应地 ,Raman光谱中的石墨峰变得较强 .通过比较 ,对注入样品的 XPS谱中 N1s的成键结构作如下归属 :～ 40 0 .0e V属于 sp2 C— N键 ;～ 398.5e V则属于 sp3C—N键 .

CN x films were synthesized by implanting nitrogen ions (with the energy of 10 keV and 60 keV , respectively) into diamond films. The bonding structures of the implanted films and diamond films were investigated by using both Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). For the diamond film implanted by 10 keV nitrogen ions, its Raman spectrum exhibits a stronger diamond peak at 1 332 cm -1 and a weak graphitic peak (G band) at 1 550 cm -1 , while the N 1s XPS data show two main peaks at ~398 5 eV and ~400 0 eV, respectively. As for the diamond film implanted by 60 keV nitrogen ions, the dominant peak in N 1s XPS spectrum appears at ~400 0 eV . Correspondingly, the graphitic peak in the Raman spectrum becomes pronounced. On the basis of the comparison with the Raman spectra, the assignments of N 1s binding states, based on XPS, in the implanted films are as follows: the peak at ~400 0 eV is attributed to C—N sp 2 bonding, whereas the peak at ~398 5 eV is ascribed to C—N sp 3 bonding.