摘要
本文发展了一个改进的深能级瞬态谱方法——C^2DLTS方法,并将该方法应用于硅离于注入再结晶法处理的多晶硅薄膜的晶粒界面态的研究。实验结果表明:多晶硅薄膜的晶粒界面态和硅离子注入后多晶硅薄膜的晶粒组成结构是密切相关的。
The properties of grain-boundary states in recrystallized polycrystalline Si films which were amorphized by Si ion implantation are investigated by using an improved DLTS (deep level transient spectroscopy) method-CzDLTS method.The results show that the properties of grain-boundary states in recrystallized polysilicon films sharply depends on the crystallographic structure of the films.
出处
《核电子学与探测技术》
CAS
CSCD
北大核心
1991年第5期263-270,共8页
Nuclear Electronics & Detection Technology
关键词
晶粒界面态
多晶硅
薄膜
C^2DLTS法
Deep level transient spectroscopy, Grain-boundary states, Polysilicon films, Silicon ion implantation and
