高分辨率N型HPGe同轴探测器的研制及其应用

Development of High Resolution N Type HPGe Coaxial Detectors and Their Applications

本文报道了高分辨率N型HPGe同轴探测器的研究结果。探索了探测器外侧大面积P+N结的离子注入条件与其反向V—I_L特性的关系。实验证明:在一定的离子能量和束流条件下,较高注入剂量的探测器具有较理想的V—I_L特性——高反偏压和低漏电流。探测器已被用于煤田中子俘获γ能谱测井和油田放射性刻度井测试仪。

This paper reports the research result of the high resolution N type HPGe detectors.The dependence between the ion implante condition of PN junction on detector outside contact and reverse V-IL characteristic was studied.The experiments show that the ideal V-IL characteristic was obtained at the higher implante dose with the same ion energy and beam current. The detectors have been applied the neutron capture y- spectrum logging and the radioactive scale well.