摘要
BaFBr:Eu2 +作为一种优良的光激励发光材料 ,广泛使用于诸多方面 .本论文研究了在BaFBr:Eu2 +中掺杂金属离子 ,促使其激励波长红移 ,以适应小巧、价廉的半导体激光器 .并且研究了掺杂不同的金属离子对BaFBr :Eu2 +激励波长的影响 ,从色心的角度分析了其红移现象 .
BaFBr:Eu 2+ is as a good photostimulated luminescent material, it is currently used for many fields. The phosphor BaFBr:Eu 2+ doped with metal ions, for example: Al 3+ ,Ga 3+ , is shown to have a high PSL intensity, and the peak of the PSL spectrum shifts to a longer wavelength and is better suited to the stimulated light wavelength emitted by a semiconductor laser.We prepared the phosphor BaFBr:Eu 2+ doped with different metal ions, and study on color center in it. F Z1 center in BaMFBr:Eu 2+ (M=Al 3+ or Ga 3+ ) that we considered is proved by analysis.
出处
《天津理工学院学报》
2001年第1期18-23,共6页
Journal of Tianjin Institute of Technology
基金
天津理工学院学生科技基金
