MeVF离子辐照引起的Sb、Ag、Cu、Pd、Ni薄膜在Si基底上的增强附着

Enhanced adhesion induced by MeV F ions for Sb, Ag, Cu, Pd and Ni films on Si

用6MeV F离子束辐照了淀积在Si单晶基底上的Sb、Ag、Cu、Pd和Ni金属薄膜,并用胶带法对不同辐照剂量的各点进行了增强附着阈剂量的测量。结果表明,金属薄膜增强附着阈剂量的大小可能和膜材料的弹性模量有关。弹性模量大的金属薄膜对应的增强附着的阈剂量也大。对这一现象,应用离子束轰击前后薄膜内部应力改变的观点给予了定性解释。

Sb, Ag, Cu, Pd and Ni films deposited on Si substrates were irradiated with 6 MeV F ions. The Scotch tape test was employed to measure adhesion changes as a function of dose. It was found that the threshold dose might be associated with the elasticity modulus of metallic film. For a film having a larger value of elasticity modulus, the threshold dose is higher. This phenomenon is qualitatively explained in terms of the stress changes in the film before and after irradiation.