摘要
利用N^+注入形成的SIMNI与激光再结晶的SOI材料制作了MOS器件,比较研究了^(60)Co γ射线辐照对两种SOI材料制作的MOS器件电学性能的影响。
SIMNI materials were produced by a N+ implantation(170keVt 1.8 × 1013/cm2), high temperature annealing and vapor phase epitaxial growth process. MOS devices were fabricated on SIMNI and Ar+ laser recrystallized SOI materials respectively. The electrical properties and the radiation characteristics of these devices after 60Co γ-ray irradiation were compared.
出处
《核技术》
CAS
CSCD
北大核心
1991年第1期13-16,共4页
Nuclear Techniques
