摘要
本文介绍经化学法掺FeCl_3的聚乙炔膜注入30keV的K^+离子后形成一个p-n结,并研究了它的稳定性。同时还叙述了用两种不同方法制备的聚乙炔膜掺FeCl_3后经不同处理剂处理后结构和电导率的稳定性。
The polyacetylene film after being chemically doped with FeCl3 and implanted by 30 keV K+ ions can form a p-n junction with rectification property. The characteristics of the p-n junction were described. In addition, stabilities of both structure and conductivity were studied for FeCl3-doped polyacetylene films prepared with different methods and treated with different reagents.
出处
《核技术》
CAS
CSCD
北大核心
1991年第3期150-153,共4页
Nuclear Techniques
基金
国家自然科学基金
关键词
离子注入
聚乙炔
稳定性
Ion implantation Polyacetylene Stability
