低温等离子体沉积类金刚石薄膜

DIAMONDLIKE FILM DEPOSITED BY LOW TEMPERATURE PLASMA

一、引 言 类金刚石薄膜有很多优越的性质,除了化学惰性外,它还具有很好的电学、光学和机械性能,如电阻率高,可见,紫外和红外光的透射性好以及附着力强等。至今已有各种各样的制备类金刚石的方法。如热解、离子束、溅射和等离子体化学气相沉积(PCVD)等。 本文采用的方法是在热丝CVD中加入直流放电。由于把直流放电和热解化学的方法结合起来,增强了CH_4的分解,同时为了了解成膜的微观过程,采用等离子体参数的诊断方法,实地监测膜的生成过程,对实现具有一定性质的类金刚石膜的重复生长是有利的。

Diamondlike films are deposited by DC plasma chemical vapor deposition (PCVD)at low temperature and under low pressure. During the deposition, the plasma parameters have been measured by means o{ the langmuir single probe. It is found that diamondlike film could be created by this method in a wide range of parameters.