建议国家加大深亚微米微电子关键工艺和材料研究的投入

A Proposal Concerning Strengthening Research of Key Materials and Technology for Deep Submicro-Electronics

我国微电子技术和产业与西方发达国家相比,有明显差距。这主要是由于有关关键材料、设备和技术依靠仿制或进口,忽视了创新性和学科交叉研究等原因。但是我国也有一些与微电子有关的研究取得了十分重要的成果,如可用于0.1μm 超大规模集成电路的微氮单晶硅研制,可作为193nm 紫外光光源用的非线性光学晶体硼酸铯锂的制备,无显影气相光刘技术等,它们是源头创新性成果。基于这种情况,提出了关于加强微电子关键材料与技术的应用基础研究的投入的建议,上述研究的进一步发展,可开发一条具有自主知识产权的新型深亚微米微电子的技术路线。

Compared with developed countries,microelectronic technology and industry of China have lagged far behind.It results from the reason that the key technologies,equipments and materials of them have been imitated or imported from developed countries without adequate attention to the creative research and inter-disciplinary re- searches of our own.Nevertheless,there are still some researches related to microelectronic technology which have made significant achievement,such as the research and manufacture of nitrogendoped Czochralski silicon material used for 0.1μm ULSI,the preparation of nonlinear optical cesium lithium borate(CLBO)used as source 193nm UV,and the innovation and research of development-free vapor lithography,and all of them are of initially creative achieve ments.Based on above analysis,this article suggests that input should be enhanced in the applied basic research of key materials and technology for microelectronics in the country and maintains that a new technical process of deep submi cro-electronics with our independent intellectual property right may come into being with further development of above-mentinned researches.