用微机控制的高分辨率三晶体X射线衍射仪究研GaInP外延层的超结构

Studies on the Superstructure of GaInP Epitaxial Layer Using a High Resolution Computer-Controlled Triple-Crystal X-Ray Diffractometer

本文介绍自制具有极高分辨率的微机控制的三晶体X射线衍射仪。利用这台仪器测量了用MOCVD方法生长的Ga_(0.52)In_(0.48)P外延层的超结构。我们发现,在Ga_(0.52)In_(0.48)P外延薄膜内由In平面和Ga平面交替组成的(111)平面中,存在着交替的In丰与Ga丰平面。这种In丰与Ga丰的附加浓度可达4～6%。

A high resolution computer-controlled triple-crystal X-ray diffracto-meter has been built.By using this diffractometer,the superstructure of the Ga0.52 In0.43P thin epitaxial layer grown by MOCVD is observed.Especially,the authors find that on(111)planes alternatively composed of In and Ga planes in the Ga0.62In6.42P epitaxial layer,there exist alternatively In-rich and Ga-rich planes.The extra concentration of In-rich or Ga-rich is 4 to 6%.