MOS器件及电路的总剂量辐射效应测试技术

Measurement of total dose effects on MOS devices and circuits

介绍了半导体器件与电路的总剂量辐射效应及其测试技术。主要分析了ＭＯＳ器件的效应机理、总剂量效应试验模拟源以及各种模拟源辐射环境的测量方法。最后给出了部分实验结果，并对其进行了讨论。

The measurements of total dose effects of electronic devices and circuits are presented in this paper. Mechanisms of total dose effects in MOS circuits, radiation sources, and some investigation of dosimetry are studied respectively. Some results are given and discussed.