BiCMOS工艺中纵向晶体管β和广义SPC

Current gain β of vertical transistor in BiCMOS technology and SPC in a broad sense

采用 SPC获得影响 Bi CMOS工艺中纵向晶体管电流放大系数 β值波动的因素仅和基区方块电阻相关。进一步采用 SUPREM3工艺模拟得到影响 β波动的重要因素是扩散炉温度。试验结果定量证明温度的影响 ,由此说明批量生产时测试基区方块电阻而无需测试结深就能预测其 β值。最后建议采用广义的 SPC使

Current gain β of vertical transistor in BiCMOS technology is in close relationship with sheet resistance of base by SPC(statistical process control).Further using SUPREM3 to obtain effect on undulation of current gain β is temperature of furnace.The effect of temperature was proofed by experiments in ration,therefore in mass production so long as sheet resistance of base was measured and depth of junction need not to be measured,it provide quantity of β .Finally it makes β in specifications that we use SPC in a broad sense.