低阈值大光腔半导体激光器的研制

Investigation and Fabrication of Low ThresholdLarge Optical Cavity Semiconductor Lasers

利用液相外延技术,研制出低阈值大光腔GaAs半导体激光器。发光波长900～910nm,阈值电流(Ith)3～5A。正常使用输出的脉冲功率为8～12W。并给出该激光器的一些电学和光学特性。

Low threshold large-optical-cavity (LOC) semiconductor lasers has been fabricated by LPE techniques. The emission wavelength is ranged from 9000 A to 9100 A, threshold current (Ith) from 3 to 5A, and pulse output power from 8 to 12 W in ordinary using. Some other electrical and optical characteristics are also reported.