一种控制硅片表面缺陷产生的新方法

A New Method of Controlling the Forming of SurfaceDefect in CZSi Wafer

本文通过对直拉硅进行大剂量中子辐照,并对硅片表面缺陷形成机理进行了探讨。研究表明,中照在硅片中引入大量辐照缺陷同硅片中杂质及点缺陷的相互作用,强烈地抑制了硅片表面缺陷的产生。

Through a heavy dose of neutron irradiation on the CZSi wafer to investigate the forming mechanism of its surface defect, we discover that the neutron irradiation introduces a heavy dose of irradiation defect which interacts with the impurities and point defect in the wafer and strongly retards the forming of surface defect on the silicon wafer.