高矫顽力SmCo(Al,Si)/Cr薄膜的研究

Study on High Coercivity SmCo(Al,Si)/Cr Thin Films

通过对磁控溅射条件的优化 ,制备出了较理想的 Sm Co(Al,Si) /Cr硬盘磁记录介质。退火处理后又得到较好的硬磁薄膜。结果指出 ,在 Sm含量 (摩尔分数 )为 31 .6% ,Cr缓冲层为 66nm,Sm(Co,Al,Si) 5磁性层为 30 nm的条件下 ,制得的 Sm(Co,Al,Si) 5/Cr薄膜的矫顽力 Hc 为 1 87.8k A/m,剩磁比 S =Mr/Ms≈ 0 .94。在 50 0℃退火 2 5min后 ,矫顽力 Hc 达到1 0 4 2 .5k A/m,剩磁比 S≈ 0 .92。

Sm(Co,Al,Si) 5/Cr films have been prepared as one kind of promising materials for the ultrahigh density magnetic recording media by magnetron sputtering under the optimal conditions. They are also suitable for a variety of applications, from longitudinal recording media to thin film permanent magnets through being annealed. When Sm content, Cr underlayer thickness and the thickness of Sm(Co,Al,Si) 5 magnetic thin film are 31.6 atm%, 66nm and 30nm, respectively, the Sm(Co,Al,Si) 5/Cr thin films have been fabricated with coercivity of up to 187.8kA/m(2.36kOe), squareness ratio S=M r /M s near 0.94. After being annealed at 500℃ for 25min, the films with coercivity H c of up to 1042.5kA/m(13.1kOe) and squareness ratio S of about 0.92 are obtained.