摘要
提出采用离子注入方法提高主掩膜光刻胶的耐干法腐蚀和腐蚀窗口磋的腐蚀速率，实现了在比较简陋的干法腐蚀设备上采用反应离子腐蚀模式进行深／浅硅槽工艺。
A new method to enhance the dry etch-resistant of the main mask photoresist and the etch rate for etching Si as window is presented. Deep/shallow trench technology has been realized on simple and crude dry-etch equipment.
出处
《半导体技术》
CAS
CSCD
北大核心
2001年第3期56-58,共3页
Semiconductor Technology
