用微区光学方法研究GaP:ZnO红光外延片

Study of GaP:ZnO LED epitaxial layer by microscopical optical method

用微区光致发光和拉曼散射光谱比较了国内外ＧａＰ：ＺｎＯ红光二极管产品的结构，在国内首先实现了用微区光学方法检测ＬＥＤ外延片并进行生产工艺的改进。对典型样品进行了微区光致发光的测试，比较外延片横截面上不同厚度层的光致发光，非常明显地看出主要发光区是在Ｐ区。通过合理扩展Ｐ层发光区的厚度相应地增加了光致发光的总光强，提高了产品的生产成品率。

Using microscopical photoluminescence and Raman spectroscopy, the productive of GaP: ZnO LED at home and abroad has been compared in our studies. An improvement in productive techniques has been made. In the test, microscopical photoluminescence in the cross sections of epitaxial wafers different thickness have been compared. The rate of production has been raised through expending the thickness of P luminescence section.