多晶硅薄膜晶体管的表面氮钝化技术

Surface Passivation of Poly-Si Thin Film Transistors Using Nitride Plasma

采用 N2 O和 NH3等离子钝化技术对多晶硅薄膜表面和栅氧表面进行了钝化处理。实验结果表明 ,该技术能够有效降低多晶硅薄膜的界面态密度 ,提高多晶硅薄膜晶体管性能。二次离子质谱仪分析表明在 p- Si/ Si O2界面有氮原子富积 ,说明生成了强的 Si-

The surfaces of poly-Si thin film and gate oxide of thin film transistors were passivated using N 2O/NH 3 plasma.The interface state density of poly-Si thin film was reduced and the properties of poly-Si thin film transistors were improved using this technique.SIMS results showed that large amounts of nitride atoms pile-up at the SiO 2/poly-Si thin film interface and form the stronger Si-N bond with the silicon dangling bond.