摘要
本文提出了一种适用于CMOS工艺中横向双极型晶体管直流特性计算的新方法。新方法采用解析形式计算电流I_c,所需模型参数均保留明确的物理意义,不用数值和曲线拟合参数的方法就能得到处于任何注入水平的本征收集极电流I_c和跨导g_(??)。该方法为在设计高精度的CMOS模拟IC中利用横向双极器件提供了良好的CAD器件模型。模型值和实验值呈现良好的一致性。
A new algorithm for dc model of the lateral bipolar transistors compatible with CMOS technologyis presented. It uses the analytical expression of I_c and all parameters of the modelhave definite physical meanings. The intrinsic lateral current of I_c and the change of transconductanceg_(mc) with I_c,at any levels of injection, are well described without using numericaland curve-fitting methods.The algorithm provides CAD a good dc model of the lateral bipolardevices for high precision CMOS analog IC design.The comparision of the model withthe measured data has shown an excellent agreement.
