摘要
用扫描电镜、X射线衍射谱、能量色散谱及Ar^+离子溅射刻蚀的各元素的俄歇剖面分布,对Pd为基底的P型GaP的欧姆接触层的性质进行了研究。从而揭示了这种金属──半导体接触层形成良好欧姆电极的表面形貌、相变反应、界面状态及各冶金成份在界面层中的变化规律。
The metallurgical properties and it's interface characteristics of ohmic contacts for Pdbasedsystems to p-type GaP have been inverstigated by SEM, XRD, EDAS, and AES profiles. It reveals the condition formed ohmic contacts with low contact resistances, it's surfacemorphology, the reaction of phase changes and the changing regularity of metallurgical componentsof interface between GaP and the Pd/Zn/Pd.
基金
甘肃省自然科学基金
关键词
化合物半导体
GAP
欧姆接触
冶金
Interfaces (materials)
Metallurgy
Ohmic contacts
Palladium
