摘要
用光激电流瞬态谱(PICTS)和光致发光光谱(PL)对在半绝缘GaAs衬底上MOCVD生长的CdTe薄层的缺陷进行了研究。发现CdTe薄层中存在热激活能约为0.12eV和0.27eV的二个能级。对照光致发光光谱的实验结果及有关体单晶CdTe的缺陷报道,初步分析认为第一个能级是受主能级,它由CdTe薄层中的剩余杂质所引起,而另一个能级则可能与材料的晶格缺陷有关。
Photoinduced current transient spectroscopy (PICTS) and photoluminescence (PL) areused to study the defects in CdTe film grown on semi-insulating GaAs substrate by MOCVD.There are two levels with activation energy of about 0.12eV and 0.27eV in the CdTe film. Incomparison between our results of PL and that of the published papers of the defects in thecrystal CdTe, the first level may be an acceptor induced by native impurities in CdTe film, andthe another level may be related to lattice defects of material.
