摘要
本文报道了一种工艺较简单的新结构垂直腔面发射激光器的设计与初步研制结果．所用的外延片是由分子束外延生长的，下镜面是由对Ａｌ０．１Ｇａ０．９Ａｓ／ＡｌＡｓ异质膜构成的分布布拉格反射器，上镜面是由对Ａｌ０．１Ｇａ０．９Ａｓ／ＡｌＡｓ异质膜构成的分布布拉格反射器及半反射半透明的金属膜组合构成．器件的电流注入区由钨丝掩蔽两次质子轰击形成．器件初步研制已实现了室温脉冲激射，阈值最低３２０ｍＡ，最大峰值功率可达９ｍＷ．
Abstract We have devised a novel vertical-cavity surface-emitting Laser structure. The epitaxial layers have been grown by molecular beam epitaxy (MBE). The bottom mirror consists of 30. 5 pairs Al0.1Ga0.7As/AIAs multilayer distributed Bragg reflector (DBR).The top mirror is a hybrid reflector consisting of 8. 5 pairs Al0.1Ga0.9As/AlAs multilayer DBR and semitransparent metal film. The structure is obtained by twice H+ implantation using tungsten wire as an implant mask. The lowest thrrshold current is 320mA, and the highest peak light output power is 9mW under room-temperature pulsed conditions.
