低温半导体器件模拟的误差限方法

Increment Limit Method for Semiconductor Device Simulation at Low Temperature

本文从数值方法和求解变量的物理意义两主面出发，提出了适用于低温半导体器件计算机模拟的误差限方法，并且将该方法插入ＭＩＮＩＭＯＳ４．０进行了数值实验．结果表明，设置误差限方法能保证低温半导体器件模拟的数值敛性，并且有较快的收敛速度．

Abstract The increment limit method suitable for semiconductor device simulation at low temperature is presented from both numerical and physical view. Computer test for this method is carried out by MINIMOS4.0 Numerical results show that the increment limit method is convergent fast for 77K device simulation.