摘要
本文分析了硅／玻璃静电键合过程中硅表面ＳｉＯ２钝化膜的作用．ＳｉＯ２膜的存在使键合过程中的静电力减弱，键合工艺所选择的电压上限受ＳｉＯ２膜击穿电压的控制，对于商用抛光硅片与玻璃，要完成良好的键合，一般ＳｉＯ２厚度要小于０．５μｍ．
Abstract The role of SiO2 film in Si/glass bonding process is analysed. The SiO2 film makes the electrostatic pressure between Si and glass weaker. The upper voltage limit in Si bonding with the SiO2 film is determined by the breakdown strength of SiO2 For the commercial St and glass, the bonding can be successfully accomplished with the thickness of the SiO2 film less than 0.5μm.
