摘要
本文推导出增益耦合型分布反馈式（ＤＦＢ）半导体激光器ＴＥ、ＴＭ模耦合系数Ｋ的计算公式．分析了ＤＦＢ激光器的横模，讨论了ｋ与ＤＦＢ激光器横模、光栅级数、占空比及吸收光栅层厚的关系．最后得出含吸收光栅的ＧａＡｌＡｓ／ＧａＡｓ增益耦合型ＤＦＢ激光器在采用三级光栅时的优化设计结果为：占空比０．１６，吸收层厚５０ｕｍ．
Abstract A method for calculating coupling coefficients including gain coupling part of DFB lasers is developed. The results considering both TE-and TM-mode are given. For high performance, the transverse structure of the gain-coupled DFB semiconductor laser with loss gratings is analyzed. Considering the coupling coefficients,the modal gain and loss of the gain coupled DFB laser with loss gratings,the optimized structural parameters are presented.
