摘要
本文采用三角阱近似，计算了ＧａＡｓ／ＡｌＧａＡｓ二维电子气（２ＤＥＧ）电子只占据基态子带时，由极性光学声子、声学形变势、声学压电势、远程电离杂质、本底电离杂质、合金无序以及界面粗糙等七种主要的散射机制决定的电子迁移率与温度、２ＤＥＧ浓度、本底电离杂质沈度、以及界面不平整度等的关系．理论计算结果与实验符合很好．就作者所知考虑上述七种散射机制计算２ＤＥＧ电子迁移率的工作，以前未见报道．
Abstract Adopting trianglular quantum well approximation, we consider the main seven scattering mechanisms in GaAs/AlGaAs 2DEG system and calculate the electron mobility dependence on temperature, 2DEG density, background ionized impurity concentration and interface roughness when only the ground subband is occupied. The seven scattering processes are, polar optical, deformation potential, piezoelectric acoustic, remote ionized impurity, background ionized impurity, alloy disorder and interface roughness. The calculated results are in very good agreement with our experimental data. To our knowledge,this is the first report on the study of 2DEG electron mobility considering the seven scattering mechanisms mentioned above.
